NSVTB60BDW1T1G
NSVTB60BDW1T1G
Artikelnummer:
NSVTB60BDW1T1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS NPN/PNP COMBO SC88-6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61074 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSVTB60BDW1T1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Transistor-Typ:1 NPN Pre-Biased, 1 PNP
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):22 kOhms
Leistung - max:250mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:40 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V / 120 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):150mA
Email:[email protected]

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