NSVMUN5336DW1T1G
NSVMUN5336DW1T1G
Artikelnummer:
NSVMUN5336DW1T1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
COMPLEMENTARY DIGITAL TRA
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
47456 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSVMUN5336DW1T1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor-Typ:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):100 kOhms
Widerstand - Basis (R1):100 kOhms
Leistung - max:187mW
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:40 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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