NSVIMD10AMT1G
NSVIMD10AMT1G
Artikelnummer:
NSVIMD10AMT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
SURF MT BIASED RES XSTR
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
73064 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSVIMD10AMT1G.pdf

Einführung

We can supply NSVIMD10AMT1G, use the request quote form to request NSVIMD10AMT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSVIMD10AMT1G.The price and lead time for NSVIMD10AMT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSVIMD10AMT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor-Typ:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:SC-74R
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):10 kOhms
Widerstand - Basis (R1):13 kOhms, 130 Ohms
Leistung - max:285mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Andere Namen:NSVIMD10AMT1G-ND
NSVIMD10AMT1GOSTR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 1mA, 5V / 68 @ 100mA, 5V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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