NSVDTA114YM3T5G
NSVDTA114YM3T5G
Artikelnummer:
NSVDTA114YM3T5G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS PREBIAS PNP 260MW SOT723
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
50985 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSVDTA114YM3T5G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor-Typ:PNP - Pre-Biased
Supplier Device-Gehäuse:SOT-723
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):10 kOhms
Leistung - max:260mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-723
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:13 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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