NSVBSP19AT1G
NSVBSP19AT1G
Artikelnummer:
NSVBSP19AT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS NPN 350V 0.1A SOT223
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
79979 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSVBSP19AT1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):350V
VCE Sättigung (Max) @ Ib, Ic:500mV @ 4mA, 50mA
Transistor-Typ:NPN
Supplier Device-Gehäuse:SOT-223 (TO-261)
Serie:-
Leistung - max:800mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-261-4, TO-261AA
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:70MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN 350V 100mA 70MHz 800mW Surface Mount SOT-223 (TO-261)
DC Stromgewinn (HFE) (Min) @ Ic, VCE:40 @ 20mA, 10V
Strom - Collector Cutoff (Max):20nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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