NSV40301MDR2G
Artikelnummer:
NSV40301MDR2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS 2NPN 40V 3A 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
6310 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSV40301MDR2G.pdf

Einführung

We can supply NSV40301MDR2G, use the request quote form to request NSV40301MDR2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSV40301MDR2G.The price and lead time for NSV40301MDR2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSV40301MDR2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):40V
VCE Sättigung (Max) @ Ib, Ic:115mV @ 200mA, 2A
Transistor-Typ:2 NPN (Dual)
Supplier Device-Gehäuse:8-SOIC
Serie:-
Leistung - max:653mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:100MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Stromgewinn (HFE) (Min) @ Ic, VCE:180 @ 2A, 2V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):3A
Email:[email protected]

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