NSBA143EDP6T5G
NSBA143EDP6T5G
Artikelnummer:
NSBA143EDP6T5G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS 2PNP PREBIAS 0.408W SOT963
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
11742 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSBA143EDP6T5G.pdf

Einführung

We can supply NSBA143EDP6T5G, use the request quote form to request NSBA143EDP6T5G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSBA143EDP6T5G.The price and lead time for NSBA143EDP6T5G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSBA143EDP6T5G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Transistor-Typ:2 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:SOT-963
Serie:-
Widerstand - Emitterbasis (R2):4.7 kOhms
Widerstand - Basis (R1):4.7 kOhms
Leistung - max:408mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-963
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:14 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
DC Stromgewinn (HFE) (Min) @ Ic, VCE:15 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:NSBA1*
Email:[email protected]

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