Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Transistor-Typ: | 2 NPN - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | SSSMini6-F1 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 47 kOhms |
Widerstand - Basis (R1): | 4.7 kOhms |
Leistung - max: | 125mW |
Verpackung: | Cut Tape (CT) |
Verpackung / Gehäuse: | SOT-963 |
Andere Namen: | NP062ACTN00ACT NP062AN00ACT |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 150MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 80mA 150MHz 125mW Surface Mount SSSMini6-F1 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 80 @ 5mA, 10V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 80mA |
Basisteilenummer: | NP062AN |
Email: | [email protected] |