NID9N05ACLT4G
NID9N05ACLT4G
Artikelnummer:
NID9N05ACLT4G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 52V 9A LL DPAK-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
68409 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NID9N05ACLT4G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 100µA
Vgs (Max):±15V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:-
Rds On (Max) @ Id, Vgs:90 mOhm @ 9A, 12V
Verlustleistung (max):1.74W (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:NID9N05ACLT4GOSCT
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:28 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:250pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):3V, 12V
Drain-Source-Spannung (Vdss):52V
detaillierte Beschreibung:N-Channel 52V 9A (Ta) 1.74W (Ta) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Ta)
Email:[email protected]

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