NHPJ08S600G
NHPJ08S600G
Artikelnummer:
NHPJ08S600G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
DIODE GEN PURP 600V 8A TO220FP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
17514 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NHPJ08S600G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Spitzensperr- (max):Standard
Spannung - Forward (Vf) (Max) @ If:8A
Spannung - Durchschlag:TO-220FP
Serie:-
RoHS Status:Tube
Rückwärts-Erholzeit (Trr):Fast Recovery = 200mA (Io)
Widerstand @ If, F:-
Polarisation:TO-220-2 Full Pack
Betriebstemperatur - Anschluss:50ns
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:18 Weeks
Hersteller-Teilenummer:NHPJ08S600G
Expanded Beschreibung:Diode Standard 600V 8A Through Hole TO-220FP
Diodenkonfiguration:30µA @ 600V
Beschreibung:DIODE GEN PURP 600V 8A TO220FP
Strom - Sperrleckstrom @ Vr:3.2V @ 8A
Strom - Richt (Io) (pro Diode):600V
Kapazität @ Vr, F:-55°C ~ 150°C
Email:[email protected]

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