NDTL01N60ZT3G
NDTL01N60ZT3G
Artikelnummer:
NDTL01N60ZT3G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 0.25A SOT223-4
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
58183 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NDTL01N60ZT3G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-223 (TO-261)
Serie:-
Rds On (Max) @ Id, Vgs:15 Ohm @ 400mA, 10V
Verlustleistung (max):2W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-261-4, TO-261AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:92pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 250mA (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:250mA (Tc)
Email:[email protected]

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