Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Transistor-Typ: | 2 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | SC-88/SC70-6/SOT-363 |
Serie: | - |
Widerstand - Emitterbasis (R2): | - |
Widerstand - Basis (R1): | 10 kOhms |
Leistung - max: | 250mW |
Verpackung: | Cut Tape (CT) |
Verpackung / Gehäuse: | 6-TSSOP, SC-88, SOT-363 |
Andere Namen: | MUN5115DW1T1GOSCT |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Hersteller Standard Vorlaufzeit: | 40 Weeks |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | - |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 160 @ 5mA, 10V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 100mA |
Basisteilenummer: | MUN51**DW1T |
Email: | [email protected] |