MTD6N15T4G
MTD6N15T4G
Artikelnummer:
MTD6N15T4G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 150V 6A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
32890 Pieces
Lieferzeit:
1-2 days
Datenblatt:
MTD6N15T4G.pdf

Einführung

We can supply MTD6N15T4G, use the request quote form to request MTD6N15T4G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MTD6N15T4G.The price and lead time for MTD6N15T4G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MTD6N15T4G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:-
Rds On (Max) @ Id, Vgs:300 mOhm @ 3A, 10V
Verlustleistung (max):1.25W (Ta), 20W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:MTD6N15T4GOS
MTD6N15T4GOS-ND
MTD6N15T4GOSTR
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):150V
detaillierte Beschreibung:N-Channel 150V 6A (Tc) 1.25W (Ta), 20W (Tc) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Tc)
Email:[email protected]

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