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Zuhause > Produkte > Integrierte schaltkreise (ICS) > Memory > MT46H128M32L2MC-6 IT:A
MT46H128M32L2MC-6 IT:A
Artikelnummer:
MT46H128M32L2MC-6 IT:A
Hersteller:
Micron Technology
Beschreibung:
IC DRAM 4G PARALLEL 240WFBGA
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
66534 Pieces
Lieferzeit:
1-2 days
Datenblatt:
MT46H128M32L2MC-6 IT:A.pdf
Anfrage

Einführung

We can supply MT46H128M32L2MC-6 IT:A, use the request quote form to request MT46H128M32L2MC-6 IT:A pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MT46H128M32L2MC-6 IT:A.The price and lead time for MT46H128M32L2MC-6 IT:A depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MT46H128M32L2MC-6 IT:A.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Schreibzyklus Zeit - Wort, Seite:15ns
Spannungsversorgung:1.7 V ~ 1.95 V
Technologie:SDRAM - Mobile LPDDR
Supplier Device-Gehäuse:240-WFBGA (14x14)
Serie:-
Verpackung:Tray
Verpackung / Gehäuse:240-WFBGA
Andere Namen:MT46H128M32L2MC-6 IT:A-ND
MT46H128M32L2MC-6IT:A
Betriebstemperatur:-40°C ~ 85°C (TA)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Speichertyp:Volatile
Speichergröße:4Gb (128M x 32)
Speicherschnittstelle:Parallel
Speicherformat:DRAM
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:SDRAM - Mobile LPDDR Memory IC 4Gb (128M x 32) Parallel 166MHz 5.0ns 240-WFBGA (14x14)
Uhrfrequenz:166MHz
Basisteilenummer:MT46H128M32
Zugriffszeit:5.0ns
Email:[email protected]

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In Verbindung stehende Teile für MT46H128M32L2MC-6 IT:A

Image Artikelnummer Hersteller Beschreibung Aussicht
MT46H128M32L2KQ-6 IT:B TR Image MT46H128M32L2KQ-6 IT:B TR Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H128M32L2KQ-5 WT:B TR Image MT46H128M32L2KQ-5 WT:B TR Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H128M32L2KQ-5 WT:B Image MT46H128M32L2KQ-5 WT:B Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H128M32L2MC-6 WT:B TR Micron Technology IC DRAM 4G PARALLEL 240WFBGA Anfrage
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MT46H128M32L2MC-5 WT:B TR Micron Technology IC DRAM 4G PARALLEL 240WFBGA Anfrage
MT46H128M32L2KQ-6 WT:B TR Image MT46H128M32L2KQ-6 WT:B TR Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H16M16LFBF-5:H TR Image MT46H16M16LFBF-5:H TR Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H128M32L2KQ-6 IT:B Image MT46H128M32L2KQ-6 IT:B Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H128M32L2KQ-5 IT:B TR Image MT46H128M32L2KQ-5 IT:B TR Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H16M16LFBF-6 IT:A Image MT46H16M16LFBF-6 IT:A Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H16M16LFBF-5 IT:H TR Image MT46H16M16LFBF-5 IT:H TR Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H128M32L2MC-6 WT:B Micron Technology IC DRAM 4G PARALLEL 240WFBGA Anfrage
MT46H16M16LFBF-5:H Image MT46H16M16LFBF-5:H Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H128M32L2KQ-6 WT:B Image MT46H128M32L2KQ-6 WT:B Micron Technology IC DRAM 4G PARALLEL 168WFBGA Anfrage
MT46H16M16LFBF-6 AT:H Image MT46H16M16LFBF-6 AT:H Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H16M16LFBF-6 AT:H TR Image MT46H16M16LFBF-6 AT:H TR Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H16M16LFBF-5 IT:H Image MT46H16M16LFBF-5 IT:H Micron Technology IC DRAM 256M PARALLEL 60VFBGA Anfrage
MT46H128M32L2MC-5 IT:A Micron Technology IC DRAM 4G PARALLEL 240WFBGA Anfrage
MT46H128M32L2MC-5 WT:B Micron Technology IC DRAM 4G PARALLEL 240WFBGA Anfrage

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