JAN1N5615US
JAN1N5615US
Artikelnummer:
JAN1N5615US
Hersteller:
Microsemi
Beschreibung:
DIODE GEN PURP 200V 1A D-5A
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
31277 Pieces
Lieferzeit:
1-2 days
Datenblatt:
JAN1N5615US.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Forward (Vf) (Max) @ If:800mV @ 3A
Spannung - Sperr (Vr) (max):200V
Supplier Device-Gehäuse:D-5A
Geschwindigkeit:Fast Recovery = 200mA (Io)
Serie:Military, MIL-PRF-19500/429
Rückwärts-Erholzeit (Trr):150ns
Verpackung:Bulk
Verpackung / Gehäuse:SQ-MELF, A
Andere Namen:1086-15221
1086-15221-MIL
Betriebstemperatur - Anschluss:-65°C ~ 200°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Diodentyp:Standard
detaillierte Beschreibung:Diode Standard 200V 1A Surface Mount D-5A
Strom - Sperrleckstrom @ Vr:500µA @ 200V
Strom - Richt (Io):1A
Kapazität @ Vr, F:-
Email:[email protected]

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