IXTY08N100D2
Artikelnummer:
IXTY08N100D2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1000V 800MA DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
12035 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTY08N100D2.pdf

Einführung

We can supply IXTY08N100D2, use the request quote form to request IXTY08N100D2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTY08N100D2.The price and lead time for IXTY08N100D2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTY08N100D2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:-
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252, (D-Pak)
Serie:-
Rds On (Max) @ Id, Vgs:21 Ohm @ 400mA, 0V
Verlustleistung (max):60W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:325pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:14.6nC @ 5V
Typ FET:N-Channel
FET-Merkmal:Depletion Mode
Antriebsspannung (Max Rds On, Min Rds On):-
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:800mA (Tc)
Email:[email protected]

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