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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTP200N075T
IXTP200N075T
IXTP200N075T
Artikelnummer:
IXTP200N075T
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 75V 200A TO-220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
72454 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTP200N075T.pdf
Anfrage

Einführung

We can supply IXTP200N075T, use the request quote form to request IXTP200N075T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTP200N075T.The price and lead time for IXTP200N075T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTP200N075T.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220AB
Serie:TrenchMV™
Rds On (Max) @ Id, Vgs:5 mOhm @ 25A, 10V
Verlustleistung (max):430W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):75V
detaillierte Beschreibung:N-Channel 75V 200A (Tc) 430W (Tc) Through Hole TO-220AB
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200A (Tc)
Email:[email protected]

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