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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTK128N15
IXTK128N15
IXTK128N15
Artikelnummer:
IXTK128N15
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 150V 128A TO-264
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30833 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTK128N15.pdf
Anfrage

Einführung

We can supply IXTK128N15, use the request quote form to request IXTK128N15 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTK128N15.The price and lead time for IXTK128N15 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTK128N15.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264 (IXTK)
Serie:MegaMOS™
Rds On (Max) @ Id, Vgs:15 mOhm @ 500mA, 10V
Verlustleistung (max):540W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:240nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):150V
detaillierte Beschreibung:N-Channel 150V 128A (Tc) 540W (Tc) Through Hole TO-264 (IXTK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:128A (Tc)
Email:[email protected]

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