IXTA80N10T7
IXTA80N10T7
Artikelnummer:
IXTA80N10T7
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 100V 80A TO-263-7
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
29581 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTA80N10T7.pdf

Einführung

We can supply IXTA80N10T7, use the request quote form to request IXTA80N10T7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA80N10T7.The price and lead time for IXTA80N10T7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA80N10T7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 100µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-263-7 (IXTA..7)
Serie:TrenchMV™
Rds On (Max) @ Id, Vgs:14 mOhm @ 25A, 10V
Verlustleistung (max):230W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263-7 (IXTA..7)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:80A (Tc)
Email:[email protected]

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