IXTA02N250HV
IXTA02N250HV
Artikelnummer:
IXTA02N250HV
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 2500V 0.2A TO263
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
47789 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTA02N250HV.pdf

Einführung

We can supply IXTA02N250HV, use the request quote form to request IXTA02N250HV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA02N250HV.The price and lead time for IXTA02N250HV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA02N250HV.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-263AB
Serie:-
Rds On (Max) @ Id, Vgs:450 Ohm @ 50mA, 10V
Verlustleistung (max):83W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:116pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.4nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):2500V
detaillierte Beschreibung:N-Channel 2500V 200mA (Tc) 83W (Tc) Surface Mount TO-263AB
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200mA (Tc)
Email:[email protected]

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