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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFV12N80P
IXFV12N80P
Artikelnummer:
IXFV12N80P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 800V 12A PLUS220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22521 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFV12N80P.pdf
Anfrage

Einführung

We can supply IXFV12N80P, use the request quote form to request IXFV12N80P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFV12N80P.The price and lead time for IXFV12N80P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFV12N80P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5.5V @ 2.5mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS220
Serie:HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:850 mOhm @ 500mA, 10V
Verlustleistung (max):360W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3, Short Tab
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 12A (Tc) 360W (Tc) Through Hole PLUS220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Tc)
Email:[email protected]

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