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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFT14N100
IXFT14N100
IXFT14N100
Artikelnummer:
IXFT14N100
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1000V 14A TO-268
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
10306 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFT14N100.pdf
Anfrage

Einführung

We can supply IXFT14N100, use the request quote form to request IXFT14N100 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFT14N100.The price and lead time for IXFT14N100 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFT14N100.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 4mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-268
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:750 mOhm @ 500mA, 10V
Verlustleistung (max):360W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:220nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 14A (Tc) 360W (Tc) Surface Mount TO-268
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:14A (Tc)
Email:[email protected]

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