IXFP22N65X2
IXFP22N65X2
Artikelnummer:
IXFP22N65X2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 650V 22A TO-220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45327 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFP22N65X2.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5.5V @ 1.5mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:160 mOhm @ 11A, 10V
Verlustleistung (max):390W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:22A (Tc)
Email:[email protected]

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