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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFN48N60P
IXFN48N60P
IXFN48N60P
Artikelnummer:
IXFN48N60P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 600V 40A SOT-227
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
6005 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFN48N60P.pdf
Anfrage

Einführung

We can supply IXFN48N60P, use the request quote form to request IXFN48N60P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN48N60P.The price and lead time for IXFN48N60P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN48N60P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5.5V @ 8mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-227B
Serie:PolarHV™
Rds On (Max) @ Id, Vgs:140 mOhm @ 4A, 10V
Verlustleistung (max):625W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:SOT-227-4, miniBLOC
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:8860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:40A (Tc)
Email:[email protected]

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