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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFH11N80
IXFH11N80
IXFH11N80
Artikelnummer:
IXFH11N80
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 800V 11A TO-247AD
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
73462 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFH11N80.pdf
Anfrage

Einführung

We can supply IXFH11N80, use the request quote form to request IXFH11N80 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH11N80.The price and lead time for IXFH11N80 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH11N80.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 4mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247AD (IXFH)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:950 mOhm @ 500mA, 10V
Verlustleistung (max):300W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:155nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 11A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A (Tc)
Email:[email protected]

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