IRLU3717PBF
IRLU3717PBF
Artikelnummer:
IRLU3717PBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 20V 120A I-PAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
8433 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRLU3717PBF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.45V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I-PAK
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:4 mOhm @ 15A, 10V
Verlustleistung (max):89W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Andere Namen:*IRLU3717PBF
SP001573078
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:31nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:N-Channel 20V 120A (Tc) 89W (Tc) Through Hole I-PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:120A (Tc)
Email:[email protected]

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