IRLR120ATF
Artikelnummer:
IRLR120ATF
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 8.4A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
56965 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRLR120ATF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D-Pak
Serie:-
Rds On (Max) @ Id, Vgs:220 mOhm @ 4.2A, 5V
Verlustleistung (max):2.5W (Ta), 35W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):5V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 8.4A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount D-Pak
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8.4A (Tc)
Email:[email protected]

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