IRLHS6376TR2PBF
IRLHS6376TR2PBF
Artikelnummer:
IRLHS6376TR2PBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET 2N-CH 30V 3.6A PQFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
34549 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRLHS6376TR2PBF.pdf

Einführung

We can supply IRLHS6376TR2PBF, use the request quote form to request IRLHS6376TR2PBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRLHS6376TR2PBF.The price and lead time for IRLHS6376TR2PBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRLHS6376TR2PBF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.1V @ 10µA
Supplier Device-Gehäuse:6-PQFN (2x2)
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:63 mOhm @ 3.4A, 4.5V
Leistung - max:1.5W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-VDFN Exposed Pad
Andere Namen:IRLHS6376TR2PBFCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:2.8nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 3.6A 1.5W Surface Mount 6-PQFN (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.6A
Basisteilenummer:IRLHS6376
Email:[email protected]

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