IRFR120_R4941
Artikelnummer:
IRFR120_R4941
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 8.4A TO-252AA
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
15016 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRFR120_R4941.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252AA
Serie:-
Rds On (Max) @ Id, Vgs:270 mOhm @ 5.9A, 10V
Verlustleistung (max):50W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:IRFR120_R4941-ND
IRFR120FS
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 8.4A (Tc) 50W (Tc) Surface Mount TO-252AA
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8.4A (Tc)
Email:[email protected]

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