IRFHM8342TRPBF
IRFHM8342TRPBF
Artikelnummer:
IRFHM8342TRPBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 30V 10A 8PQFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
15447 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRFHM8342TRPBF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.35V @ 25µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-PQFN (3.3x3.3), Power33
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:16 mOhm @ 17A, 10V
Verlustleistung (max):2.6W (Ta), 20W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:IRFHM8342TRPBFTR
SP001551976
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A (Ta)
Email:[email protected]

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