IRFHM792TR2PBF
IRFHM792TR2PBF
Artikelnummer:
IRFHM792TR2PBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET 2N-CH 100V 2.3A 8PQFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
73355 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRFHM792TR2PBF.pdf

Einführung

We can supply IRFHM792TR2PBF, use the request quote form to request IRFHM792TR2PBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRFHM792TR2PBF.The price and lead time for IRFHM792TR2PBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRFHM792TR2PBF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 10µA
Supplier Device-Gehäuse:8-PQFN (3.3x3.3), Power33
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:195 mOhm @ 2.9A, 10V
Leistung - max:2.3W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-PowerVDFN
Andere Namen:IRFHM792TR2PBFDKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:251pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 100V 2.3A 2.3W Surface Mount 8-PQFN (3.3x3.3), Power33
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.3A
Basisteilenummer:IRFHM792PBF
Email:[email protected]

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