IRF6702M2DTR1PBF
Artikelnummer:
IRF6702M2DTR1PBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET 2N-CH 30V 15A DIRECTFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
78397 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRF6702M2DTR1PBF.pdf

Einführung

We can supply IRF6702M2DTR1PBF, use the request quote form to request IRF6702M2DTR1PBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF6702M2DTR1PBF.The price and lead time for IRF6702M2DTR1PBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF6702M2DTR1PBF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.35V @ 25µA
Supplier Device-Gehäuse:DIRECTFET™ MA
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:6.6 mOhm @ 15A, 10V
Leistung - max:2.7W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:DirectFET™ Isometric MA
Andere Namen:IRF6702M2DTR1P
IRF6702M2DTR1P-ND
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 15A 2.7W Surface Mount DIRECTFET™ MA
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:15A
Email:[email protected]

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