Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 2.2V @ 85µA |
Vgs (Max): | ±16V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO252-3-313 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10.6 mOhm @ 50A, 10V |
Verlustleistung (max): | 58W (Tc) |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andere Namen: | IPD50P04P4L-11 IPD50P04P4L-11TR IPD50P04P4L-11TR-ND IPD50P04P4L11 IPD50P04P4L11ATMA1TR SP000671156 |
Betriebstemperatur: | -55°C ~ 175°C (TJ) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Contains lead / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Typ FET: | P-Channel |
FET-Merkmal: | - |
Antriebsspannung (Max Rds On, Min Rds On): | 4.5V, 10V |
Drain-Source-Spannung (Vdss): | 40V |
detaillierte Beschreibung: | P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313 |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 50A (Tc) |
Email: | [email protected] |