Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 4V @ 160µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO220-FP |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 37A, 10V |
Verlustleistung (max): | 40.5W (Tc) |
Verpackung: | Tube |
Verpackung / Gehäuse: | TO-220-3 Full Pack |
Andere Namen: | IPA1-ND05N15N3GXKSA1 IPA1-ND05N15N3GXKSA1-ND IPA105N15N3 G IPA105N15N3 G-ND IPA105N15N3G SP000677850 |
Betriebstemperatur: | -55°C ~ 175°C (TJ) |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 4300pF @ 75V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Typ FET: | N-Channel |
FET-Merkmal: | - |
Antriebsspannung (Max Rds On, Min Rds On): | 8V, 10V |
Drain-Source-Spannung (Vdss): | 150V |
detaillierte Beschreibung: | N-Channel 150V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 37A (Tc) |
Email: | [email protected] |