HUF75531SK8T
HUF75531SK8T
Artikelnummer:
HUF75531SK8T
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 80V 6A 8-SOP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30993 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HUF75531SK8T.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP
Serie:UltraFET™
Rds On (Max) @ Id, Vgs:30 mOhm @ 6A, 10V
Verlustleistung (max):2.5W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:82nC @ 20V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):80V
detaillierte Beschreibung:N-Channel 80V 6A (Ta) 2.5W (Ta) Surface Mount 8-SOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Ta)
Email:[email protected]

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