GP2M007A080F
GP2M007A080F
Artikelnummer:
GP2M007A080F
Hersteller:
Global Power Technologies Group
Beschreibung:
MOSFET N-CH 800V 7A TO220F
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
21469 Pieces
Lieferzeit:
1-2 days
Datenblatt:
GP2M007A080F.pdf

Einführung

We can supply GP2M007A080F, use the request quote form to request GP2M007A080F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP2M007A080F.The price and lead time for GP2M007A080F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP2M007A080F.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220F
Serie:-
Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3.5A, 10V
Verlustleistung (max):50W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack
Andere Namen:1560-1203-1
1560-1203-1-ND
1560-1203-5
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 7A (Tc) 50W (Tc) Through Hole TO-220F
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Tc)
Email:[email protected]

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