FQPF9N25C
FQPF9N25C
Artikelnummer:
FQPF9N25C
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 250V 8.8A TO-220F
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
55489 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FQPF9N25C.pdf

Einführung

We can supply FQPF9N25C, use the request quote form to request FQPF9N25C pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQPF9N25C.The price and lead time for FQPF9N25C depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQPF9N25C.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220F
Serie:QFET®
Rds On (Max) @ Id, Vgs:430 mOhm @ 4.4A, 10V
Verlustleistung (max):38W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:6 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):250V
detaillierte Beschreibung:N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8.8A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung