FJN4309RTA
Artikelnummer:
FJN4309RTA
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS PREBIAS PNP 300MW TO92-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
77903 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FJN4309RTA.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):40V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor-Typ:PNP - Pre-Biased
Supplier Device-Gehäuse:TO-92-3
Serie:-
Widerstand - Basis (R1):4.7 kOhms
Leistung - max:300mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Andere Namen:FJN4309RTACT
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:2 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 300mW Through Hole TO-92-3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 1mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:FJN4309
Email:[email protected]

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