FDS6982AS_G
Artikelnummer:
FDS6982AS_G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2 N-CH 30V 6.3A/8.6A 8SO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
51819 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDS6982AS_G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA, 3V @ 1mA
Supplier Device-Gehäuse:8-SO
Serie:PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs:28 mOhm @ 6.3A, 10V, 13.5 mOhm @ 8.6A, 10V
Leistung - max:900mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:610pF @ 10V, 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:9nC @ 5V, 16nC @ 5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.3A, 8.6A
Email:[email protected]

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