FDR838P
Artikelnummer:
FDR838P
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CH 20V 8A SSOT-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
55626 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDR838P.pdf

Einführung

We can supply FDR838P, use the request quote form to request FDR838P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDR838P.The price and lead time for FDR838P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDR838P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SuperSOT™-8
Serie:-
Rds On (Max) @ Id, Vgs:17 mOhm @ 8A, 4.5V
Verlustleistung (max):1.8W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Gull Wing
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):2.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 8A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A (Ta)
Email:[email protected]

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