FDMC510P-F106
Artikelnummer:
FDMC510P-F106
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
ST3 20V/8V PCH ERTREN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
39194 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDMC510P-F106.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-WDFN (3.3x3.3)
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:8 mOhm @ 12A, 4.5V
Verlustleistung (max):2.3W (Ta), 41W (Tc)
Verpackung / Gehäuse:8-PowerWDFN
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:39 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:7860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:116nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Ta), 18A (Tc)
Email:[email protected]

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