FDMB3900AN
FDMB3900AN
Artikelnummer:
FDMB3900AN
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 25V 7A 8-MLP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
31022 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDMB3900AN.pdf

Einführung

We can supply FDMB3900AN, use the request quote form to request FDMB3900AN pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDMB3900AN.The price and lead time for FDMB3900AN depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDMB3900AN.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:8-MLP, MicroFET (3x1.9)
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:23 mOhm @ 7A, 10V
Leistung - max:800mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerWDFN
Andere Namen:FDMB3900AN-ND
FDMB3900ANTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:18 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:890pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 25V 7A 800mW Surface Mount 8-MLP, MicroFET (3x1.9)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A
Email:[email protected]

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