FDMA86265P
FDMA86265P
Artikelnummer:
FDMA86265P
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CH 150V 1A 6-MLP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
63552 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDMA86265P.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:6-MicroFET (2x2)
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 1A, 10V
Verlustleistung (max):2.4W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-WDFN Exposed Pad
Andere Namen:FDMA86265PTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:39 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:210pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):6V, 10V
Drain-Source-Spannung (Vdss):150V
detaillierte Beschreibung:P-Channel 150V 1A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1A (Ta)
Email:[email protected]

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