FDMA008P20LZ
FDMA008P20LZ
Artikelnummer:
FDMA008P20LZ
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CHANNEL 20V 12A 6PQFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
42547 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDMA008P20LZ.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:6-PQFN (2x2)
Serie:-
Rds On (Max) @ Id, Vgs:13 mOhm @ 2.5A, 4.5V
Verlustleistung (max):2.4W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-PowerWDFN
Andere Namen:FDMA008P20LZ-ND
FDMA008P20LZOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4383pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 12A (Ta) 2.4W (Ta) Surface Mount 6-PQFN (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Ta)
Email:[email protected]

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