FDG6321C-F169
Artikelnummer:
FDG6321C-F169
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
INTEGRATED CIRCUIT
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
73346 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDG6321C-F169.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V
Leistung - max:300mW
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:50pF @ 10V, 62pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V, 1.5nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array N and P-Channel 25V 500mA (Ta), 410mA (Ta) 300mW Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:500mA (Ta), 410mA (Ta)
Email:[email protected]

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