FDG6301N-F085
Artikelnummer:
FDG6301N-F085
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 25V 0.22A SC70-6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
48368 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDG6301N-F085.pdf

Einführung

We can supply FDG6301N-F085, use the request quote form to request FDG6301N-F085 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDG6301N-F085.The price and lead time for FDG6301N-F085 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDG6301N-F085.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:SC-70-6
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:4 Ohm @ 220mA, 4.5V
Leistung - max:300mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:FDG6301N-F085CT
FDG6301N_F085CT
FDG6301N_F085CT-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:220mA
Email:[email protected]

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