FDA38N30
FDA38N30
Artikelnummer:
FDA38N30
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 300V TO-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
52857 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDA38N30.pdf

Einführung

We can supply FDA38N30, use the request quote form to request FDA38N30 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDA38N30.The price and lead time for FDA38N30 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDA38N30.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PN
Serie:UniFET™
Rds On (Max) @ Id, Vgs:85 mOhm @ 19A, 10V
Verlustleistung (max):312W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3, SC-65-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:6 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):300V
detaillierte Beschreibung:N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-3PN
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:38A (Tc)
Email:[email protected]

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