FCA16N60_F109
FCA16N60_F109
Artikelnummer:
FCA16N60_F109
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 16A TO-3P
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
59895 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FCA16N60_F109.pdf

Einführung

We can supply FCA16N60_F109, use the request quote form to request FCA16N60_F109 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FCA16N60_F109.The price and lead time for FCA16N60_F109 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FCA16N60_F109.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PN
Serie:SuperFET™
Rds On (Max) @ Id, Vgs:260 mOhm @ 8A, 10V
Verlustleistung (max):167W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3, SC-65-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 16A (Tc) 167W (Tc) Through Hole TO-3PN
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:16A (Tc)
Email:[email protected]

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