Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Transistor-Typ: | 2 NPN - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | EMT3 |
Serie: | - |
Widerstand - Emitterbasis (R2): | - |
Widerstand - Basis (R1): | 4.7 kOhms |
Leistung - max: | 150mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | SC-75, SOT-416 |
Andere Namen: | EMG3T2R-ND EMG3T2RTR |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Hersteller Standard Vorlaufzeit: | 10 Weeks |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 250MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 100 @ 1mA, 5V |
Strom - Collector Cutoff (Max): | 500nA (ICBO) |
Strom - Kollektor (Ic) (max): | 100mA |
Basisteilenummer: | *MG3 |
Email: | [email protected] |