EMF5XV6T5G
EMF5XV6T5G
Artikelnummer:
EMF5XV6T5G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS NPN PREBIAS/PNP SOT563
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
70002 Pieces
Lieferzeit:
1-2 days
Datenblatt:
EMF5XV6T5G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V, 12V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Transistor-Typ:1 NPN Pre-Biased, 1 PNP
Supplier Device-Gehäuse:SOT-563
Serie:-
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):47 kOhms
Leistung - max:500mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:EMF5XV6T5G-ND
EMF5XV6T5GOSTR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:14 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 500mW Surface Mount SOT-563
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V / 270 @ 10mA, 2V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA, 500mA
Basisteilenummer:EMF
Email:[email protected]

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